IKQ120N120CS7XKSA1

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Product Category：MOSFET

Manufacturer: INFINEON

Data Manual:

IKQ120N120CS7XKSA1.pdf

Encapsulation:

TO-247-3

Delivery Date:

New and Original

Stock:

10000 Piece

Number:

Inquiry Add Contrast

Technical Parameter

Manufacturer
INFINEON
Packing
Original Genuine Packaging
Describe
TO-247PLUS package, 3-pin 1200 V, 120 A IGBT
Package
TO-247-3

Product Details

IKQ120N120CS7XKSA1 Hard-switching 1200 V, 120 A TRENCHSTOP™ IGBT7 S7 discrete device in TO-247 package with built-in EC7 diode. It features a low saturation voltage drop (VCEsat) for ultra-low conduction losses in the target application, and an ultra-fast, soft-recovery emitter-controlled diode co-packaged with it helps minimize switching losses for an overall lower overall loss.

Product parameters:

Product Type: IGBT Transistors

RoHS: Details

Technology: Si

Package / Box: TO-247-3

Installation Style: Through Hole

Configuration: Single

Collector-emitter maximum voltage VCEO: 1.2 kV

Collector-emitter saturation voltage: 1.65 V

Gate/Emitter Maximum Voltage: - 20 V, 20 V

Continuous collector current at 25 C: 216 A

Pd-power dissipation: 1004 W

Minimum working temperature: - 40 C

Maximum operating temperature: + 175 C

Series: TRENCHSTOP IGBT7 S7

Gate-emitter leakage current: 100 nA

Product Type: IGBT Transistors

Subcategory: IGBTs

Brand Name: TRENCHSTOP

Part number alias: IKQ120N120CS7 SP005419717

Shipping Payment Instructions

Packing Instructions

The products we provide are all genuine products from the original factory.

Packaging Details：Standard packaging for

Port：shenzhen

Service Guarantee Description

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A3: Yes, we 100% test and inspect all items before shipping.

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A4: Full payment. Goods will be dispatched within 1-5 business days after payment is received.

Q5: How to refund and exchange?

A5:100% money back guarantee or exchange for a similar product.

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INFINEON

Introduction:Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…