The NVH4L080N120SC1 1200V EliteSiC (Silicon Carbide) MOSFET is a new technology that offers better switching performance and higher reliability than silicon devices. These MOSFETs feature low on-resistance, which ensures low capacitance and low gate charge. The system benefits that can be achieved with 1200V EliteSiC MOSFETs include improved efficiency, faster operating frequency, higher power density, lower EMI, and reduced system size. These MOSFETs feature blocking voltage, high-speed switching, low capacitance, and an operating temperature range of -55°C to 175°C. The 1200V SiC MOSFETs are automotive AEC-Q101 qualified and RoHS compliant. These MOSFETs are ideal for use in boost inverters, charging stations, DC-DC inverters, DC-DC converters, on-board chargers (OBC), motor control, industrial power supplies, and server power supplies.

Product parameters:

Product Type: MOSFETs

RoHS: Details

Technology: SiC

Installation Style: Through Hole

Package / Box: TO-247-4LD

Transistor Polarity: N-Channel

Number of channels: 1 Channel

Vds-drain source breakdown voltage: 1.2 kV

Id-continuous drain current: 29 A

Rds On-drain-source on-resistance: 80 mOhms

Vgs - gate-source voltage: - 15 V, + 25 V

Vgs th-gate-source threshold voltage: 4.3 V

Qg-gate charge: 56 nC

Minimum operating temperature: - 55 C

Maximum operating temperature: + 175 C

Pd-power dissipation: 170 W

Channel Mode: Enhancement

Package: Tube

Logo: onsemi

Configuration: Single

Fall time: 5.4 ns

Forward Transconductance - Min: 11.3 S

Product Type: MOSFETs

Rise time: 4.2 ns

Subcategory: MOSFETs

Transistor Type: 1 N-Channel

Typical turn-off delay time: 26.8 ns

Typical turn-on delay time: 9 ns

Unit weight: 6 g