NTP095N65S3HF SUPERFET III MOSFET is ON Semiconductor's new family of voltage superjunction (SJ) MOSFETs with high utilization of charge balancing technology for excellent low on-resistance and lower gate charging performance. This advanced technology is designed to minimize conduction losses, provide excellent switching performance, and withstand extreme dv/dt rates. Therefore, SUPERFET III MOSFETs are ideal for miniaturization and higher efficiency in various power systems.

Product parameters:

Product Type: MOSFETs

Technology: Si

Installation Style: Through Hole

Package / Box: TO-220-3

Transistor Polarity: N-Channel

Number of channels: 1 Channel

Vds-Drain Source Breakdown Voltage: 650 V

Id-continuous drain current: 36 A

Rds On-drain-source on-resistance: 95 mOhms

Vgs - gate-source voltage: - 30 V, + 30 V

Vgs th-gate-source threshold voltage: 5 V

Qg-gate charge: 66 nC

Minimum operating temperature: - 55 C

Maximum working temperature: + 150 C

Pd-power dissipation: 272 W

Channel Mode: Enhancement

Trade name: SuperFET III

Series: SuperFET3

Configuration: Single

Fall time: 24 ns

Forward Transconductance - Min: 22 S

Product Type: MOSFETs

Rise time: 28 ns

Subcategory: MOSFETs

Transistor Type: 1 N-Channel

Typical turn-off delay time: 72 ns

Typical turn-on delay time: 28 ns

Unit weight: 2 g