Product Category:MOSFET
TO247
New and Original
10000 Piece
ST
Original Genuine Packaging
Silicon carbide Power MOSFET 650 V
TO247
The SCTWA35N65G2V SiC Power MOSFET device is an advanced and innovative second generation SiC MOSFET technology developed by ST. The device has extremely low on-resistance per unit area and good switching characteristics. Switching losses vary almost independently of junction temperature.
Product parameters:
Product Type: MOSFETs
RoHS: Details
Technology: SiC
Installation Style: Through Hole
Package / Cabinet: HiP-247-3
Transistor Polarity: N-Channel
Number of channels: 1 Channel
Vds-Drain Source Breakdown Voltage: 650 V
Id-continuous drain current: 45 A
Rds On-drain-source on-resistance: 67 mOhms
Vgs - gate-source voltage: - 10 V, + 22 V
Vgs th-gate-source threshold voltage: 5 V
Qg-gate charge: 73 nC
Minimum operating temperature: - 55 C
Maximum working temperature: + 200 C
Pd-power dissipation: 240 W
Channel Mode: Enhancement
Package: Tube
Product Type: MOSFETs
Subcategory: MOSFETs
Unit weight: 6.100 g
The products we provide are all genuine products from the original factory.
Packaging Details:Standard packaging for
Port:shenzhen
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A5:100% money back guarantee or exchange for a similar product.
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