The NTBG060N090SC1 Silicon Carbide (SiC) MOSFET is a new technology that provides superior switching performance and higher reliability compared to silicon. In addition, low on-resistance and compact die size ensure low capacitance and gate charge. Thus, system benefits include highest efficiency, faster operating frequency, higher power density, lower EMI, and smaller system size.

Product parameters:

Product Type: MOSFETs

RoHS: Details

Technology: SiC

Installation style: SMD/SMT

Package / Box: D2PAK-7

Transistor Polarity: N-Channel

Number of channels: 1 Channel

Vds-Drain Source Breakdown Voltage: 900 V

Id-continuous drain current: 44 A

Rds On-drain-source on-resistance: 84 mOhms

Vgs - gate-source voltage: - 8 V, + 22 V

Vgs th-gate-source threshold voltage: 4.3 V

Qg-gate charge: 88 nC

Minimum operating temperature: - 55 C

Maximum operating temperature: + 175 C

Pd-power dissipation: 211 W

Channel Mode: Enhancement

Package: Reel

Configuration: Single

Fall time: 11 ns

Forward Transconductance - Min: 16 S

Product Type: MOSFETs

Rise time: 23 ns

Subcategory: MOSFETs

Transistor Type: 1 N-Channel

Typical turn-off delay time: 35 ns

Typical turn-on delay time: 24 ns

Unit weight: 4.675 g