IMBG120R140M1H

The pictures are for reference only, please refer to the product specifications.

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Product Category：MOSFET

Manufacturer: INFINEON

Data Manual:

IMBG120R140M1H.pdf

Encapsulation:

TO-263-7

Delivery Date:

New and Original

Stock:

1000 Piece

Number:

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Technical Parameter

Manufacturer
INFINEON
Packing
Original Genuine Packaging
Describe
TO-263-7 1200 V CoolSiC™ Trench SiC MOSFET
Package
TO-263-7

Product Details

The IMBG120R140M1H is a 1200 V, 140 mΩ CoolSiC™ SiC MOSFET in a D2PAK-7L (TO-263-7) package based on an advanced trench process optimized for performance and reliability. Packaged in a modified 1200V SMD, it combines the low power consumption of CoolSiC technology with .XT interconnect technology for maximum efficiency and passive cooling in applications such as motor drives, charging modules, and industrial power supplies.

Product parameters:

Product Type: MOSFETs

RoHS: Details

Technology: SiC

Installation style: SMD/SMT

Package / Box: PG-TO263-7

Transistor Polarity: N-Channel

Number of channels: 1 Channel

Vds-drain source breakdown voltage: 1.2 kV

Id-continuous drain current: 18 A

Rds On-drain-source on-resistance: 189 mOhms

Vgs - gate-source voltage: - 7 V, + 23 V

Vgs th-gate-source threshold voltage: 5.7 V

Qg-gate charge: 13.4 nC

Minimum operating temperature: - 55 C

Maximum operating temperature: + 175 C

Pd-power dissipation: 107 W

Channel Mode: Enhancement

Brand Name: CoolSiC

Series: CIPOS Mini IPM

Package: Reel

Configuration: Single

Fall time: 10 ns

Forward Transconductance - Min: 3 S

Product Type: MOSFETs

Rise time: 1.8 ns

Subcategory: MOSFETs

Typical turn-off delay time: 17 ns

Typical turn-on delay time: 7 ns

Part number alias: IMBG120R140M1HXTMA1 SP004463792

Shipping Payment Instructions

Packing Instructions

The products we provide are all genuine products from the original factory.

Packaging Details：Standard packaging for

Port：shenzhen

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Q5: How to refund and exchange?

A5:100% money back guarantee or exchange for a similar product.

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INFINEON

Introduction:Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…