The AIMBG120R010M1 automotive 1200V SiC Mosfet family is developed for current and future on-board charger and DC-DC applications in hybrid and electric vehicles.

AIMBG120R010M1 is based on state-of-the-art Infineon SiC trench technology combined with .XT interconnect technology, silicon carbide mosfets designed to meet the high requirements of the automotive industry in terms of reliability, quality and performance.

Unique features such as lowest gate charge and device capacitance levels among AIMBG120R010M1 1200 V switches, no reverse recovery losses of internal anti-swapping fluid diodes, low temperature independent switching losses and no threshold turn-on characteristics ensure easy design-in Easy to control application design.

The AIMBG120R010M1 compact SMD housing D²PAK (PG-TO263-7) enables a high degree of automation in customer manufacturing facilities and further reduces system-level costs.

Product Specifications:

Revolutionary semiconductor material - silicon carbide

extremely low switching losses

Status feature without threshold

0V Shutdown Gate Voltage

Reference Gate Threshold Voltage, VGS(th)=4.5V

Fully controllable dv/dt

Commutation Robust Body Diode for Synchronous Rectification

Turn-off switching losses independent of temperature

Sense pin for optimized switching performance

Suitable for high voltage creepage requirements

XT interconnect technology for best-in-class thermal performance