The 1200V SiC Mosfet for Automotive family has been developed for current and future On-Board Charger and DC-DC applications in hybrid and electric vehicles

With its optimized 1200V SiC Mosfet technology the AIMBG120R080M1 is specifically designed to meet the high requirements demanded by the automotive industry with regards to reliability, quality and performance.

The silicon carbide mosfets are built on a state-of-the-art Infineon SiC trench technology. The superior gate oxide reliability as well as the best-in-class Infineon SiC Quality Extension guarantees very long and safe lifetime and can even fulfill very tough mission profile requirements.

Unique features such as lowest gate charge and device capacitances levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses and threshold-free on-state characteristics guarantee an hustle-free design-in and easy-to-control application design.

The compact SMD housing D²PAK (PG-TO263-7) enables a high degree of automation at the customer manufacturing facility and further reduces cost on system level.

Feature Description

Revolutionary semiconductor material - Silicon Carbide

Very low switching losses

Threshold-free on state characteristic

0V turn-off gate voltage

Benchmark gate threshold voltage, VGS(th)=4.5V

Fully controllable dv/dt

Commutation robust body diode, ready for synchronous rectification

Temperature independent turn-off switching losses

Sense pin for optimized switching performance

Suitable for HV creepage requirements

XT interconnection technology for best-in-class thermal performance