The FDS8858CZ dual N- and P-channel enhancement-mode power MOSFETs use ON Semiconductor's advanced PowerTrench process, specifically tailored to minimize on-state resistance while maintaining superior switching performance.

The FDS8858CZ device is ideal for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Product Specifications:

Manufacturer: FDS8858CZ

Product Category: MOSFET

RoHS: Details

Technology: Si

Installation style: SMD/SMT

Package/Case: SOIC-8

Transistor Polarity: N-Channel, P-Channel

Number of channels: 2 Channel

Vds-drain-source breakdown voltage: 30 V, 60 V

Id-Continuous Drain Current: 8.6 A

Rds On-Drain Source On Resistance: 17 mOhms, 20.5 mOhms

Vgs - Gate-Source Voltage: - 20 V, + 20 V, - 25 V, + 25 V

Vgs th-gate-source threshold voltage: 3 V

Qg-gate charge: 17 nC, 33 nC

Minimum operating temperature: - 55 C

Maximum operating temperature: + 150 C

Pd-Power Dissipation: 1.6 W

Channel Mode: Enhancement

Brand Name: PowerTrench

Configuration: Dual

Fall Time: 3 ns, 16 ns

Forward Transconductance - Min: 27 S / 21 S

Height: 1.75 mm

Length: 4.9 mm

Product Type: MOSFET

Rise time: 3 ns, 10 ns

Series: FDS8858CZ

Subcategory: MOSFETs

Transistor Type: 1 N-Channel, 1 P-Channel

Typical turn-off delay time: 19 ns, 33 ns

Typical turn-on delay time: 7 ns, 9 ns

Width: 3.9 mm

Unit weight: 187 mg