FFSB0665B-F085

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Product Category：Silicon Carbide (SiC)

Manufacturer: TI

Data Manual:

FFSB0665B-F085.pdf

Encapsulation:

TO-263-2

Delivery Date:

New and Original

Stock:

0 Piece

Number:

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Technical Parameter

Manufacturer
TI
Packing
Original Genuine Packaging
Describe
Schottky Diode & Rectifier 650V 6A SIC SBD GEN1.5
Package
TO-263-2

Product Details

FFSB0665B-F085 Silicon Carbide (SiC) Schottky diodes use a new technology to provide superior switching performance and higher reliability compared to silicon. No reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance make SiC a next-generation power semiconductor. System benefits include highest efficiency, faster operating frequency, higher power density, lower EMI, and reduced system size and cost.

Product parameters:

Product Category: Schottky Diodes & Rectifiers

RoHS: Details

Product: Schottky Silicon Carbide Diodes

Installation style: SMD/SMT

Package / Box: D2PAK-2

Configuration: Single

Technology: SiC

If - forward current: 6 A

Vrrm - Repetitive Reverse Voltage: 650 V

Vf - forward voltage: 1.38 V

Ifsm - forward surge current: 45 A

Ir - reverse current : 500 nA

Minimum operating temperature: - 55 C

Maximum operating temperature: + 175 C

Qualification: AEC-Q101

Pd-power dissipation: 61 W

Product Type: Schottky Diodes & Rectifiers

Subcategory: Diodes & Rectifiers

Vr - Reverse Voltage : 650 V

Unit weight: 2.240 g

Shipping Payment Instructions

Packing Instructions

The products we provide are all genuine products from the original factory.

Packaging Details：Standard packaging for

Port：shenzhen

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Q5: How to refund and exchange?

A5:100% money back guarantee or exchange for a similar product.

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TI

Introduction:Texas Instruments (TI), abbreviated as TI, is the worlds leading semiconductor company providing innovative digital signal processing (DSP) and analog device technologies for real-world signal processing. In addition to the semiconductor business, it …