SCTWA60N120G2-4

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Product Category：Silicon Carbide (SiC)

Manufacturer: ST

Data Manual:

SCTWA60N120G2-4.pdf

Encapsulation:

TO-247

Delivery Date:

New and Original

Stock:

5288 Piece

Number:

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Technical Parameter

Manufacturer
ST
Packing
Original Genuine Packaging
Describe
MOSFET Silicon carbide Power MOSFET 1200 V
Package
TO-247

Product Details

The SCTWA60N120G2-4 SiC Power MOSFET device is an advanced and innovative second generation SiC MOSFET technology developed by ST. The device has extremely low on-resistance per unit area and good switching characteristics. Switching losses vary almost independently of junction temperature.

Product parameters:

Product Type: MOSFETs

RoHS: Details

Technology: SiC

Installation Style: Through Hole

Package / Box: HIP247-4

Transistor Polarity: N-Channel

Number of channels: 1 Channel

Vds-drain source breakdown voltage: 1.2 kV

Id-continuous drain current: 60 A

Rds On-drain-source on-resistance: 52 mOhms

Vgs - gate-source voltage: - 10 V, + 22 V

Vgs th-gate-source threshold voltage: 3 V

Qg-gate charge: 94 nC

Minimum operating temperature: - 55 C

Maximum working temperature: + 200 C

Pd-power dissipation: 388 W

Channel Mode: Enhancement

Package: Tube

Compliance: Done

Configuration: Single

Fall time: 14 ns

Product Type: MOSFETs

Rise time: 15 ns

Subcategory: MOSFETs

Transistor Type: 1 N-Channel

Typical turn-off delay time: 32 ns

Typical turn-on delay time: 16 ns

Unit weight: 6.080 g

Shipping Payment Instructions

Packing Instructions

The products we provide are all genuine products from the original factory.

Packaging Details：Standard packaging for

Port：shenzhen

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