SCTW35N65G2V

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Product Category：Silicon Carbide (SiC)

Manufacturer: ST

Data Manual:

SCTW35N65G2V.pdf

Encapsulation:

TO-247

Delivery Date:

New and Original

Stock:

10000 Piece

Number:

Inquiry Add Contrast

Technical Parameter

Manufacturer
ST
Packing
Original Genuine Packaging
Describe
MOSFET Silicon carbide Power MOSFET 650 V
Package
TO-247

Product Details

The SCTW35N65G2V SiC Power MOSFET device is an advanced and innovative second generation SiC MOSFET technology developed by ST. The device has extremely low on-resistance per unit area and good switching characteristics. Switching losses vary almost independently of junction temperature.

Product parameters:

Product Type: MOSFETs

RoHS: Details

Technology: SiC

Installation Style: Through Hole

Package / Cabinet: HiP-247-3

Transistor Polarity: N-Channel

Number of channels: 1 Channel

Vds-Drain Source Breakdown Voltage: 650 V

Id-continuous drain current: 45 A

Rds On-drain-source on-resistance: 67 mOhms

Vgs - gate-source voltage: - 10 V, + 22 V

Vgs th-gate-source threshold voltage: 5 V

Qg-gate charge: 73 nC

Minimum operating temperature: - 55 C

Maximum working temperature: + 200 C

Pd-power dissipation: 240 W

Channel Mode: Enhancement

Product Type: MOSFETs

Subcategory: MOSFETs

Unit weight: 8.006 g

Shipping Payment Instructions

Packing Instructions

The products we provide are all genuine products from the original factory.

Packaging Details：Standard packaging for

Port：shenzhen

Service Guarantee Description

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Q5: How to refund and exchange?

A5:100% money back guarantee or exchange for a similar product.

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