IMW120R140M1H CoolSiC™ 1200V SiC Trench MOSFETs combine the powerful physical properties of silicon carbide with unique features that enhance device performance, reliability, and ease-of-use. CoolSiC 1200V SiC Trench MOSFETs are based on advanced trench semiconductors optimized for lowest applied losses and highest operational reliability. Suitable for operation in high temperature and harsh environments, these devices enable simplified and effective deployment with the highest system efficiency.

IMW120R140M1H CoolSiC™ 1200V SiC Trench MOSFETs are available in compact TO-247-3 and TO-247-4 packages. The TO-247-4 package contains an additional connection (Kelvin connection) to the source, which is used as a reference potential for the gate drive voltage, thereby canceling the effect of the voltage drop on the source inductance. As a result, switching losses are even lower than the TO-247-3 version, especially at higher currents and higher switching frequencies.

Product parameters:

Product Type: MOSFETs

RoHS: Details

Technology: SiC

Installation Style: Through Hole

Package / Box: TO-247-3

Transistor Polarity: N-Channel

Number of channels: 1 Channel

Vds-drain source breakdown voltage: 1.2 kV

Id-continuous drain current: 19 A

Rds On-drain-source on-resistance: 182 mOhms

Vgs - gate-source voltage: - 7 V, + 23 V

Vgs th-gate-source threshold voltage: 3.5 V

Qg-gate charge: 13 nC

Minimum operating temperature: - 55 C

Maximum operating temperature: + 175 C

Pd-power dissipation: 94 W

Channel Mode: Enhancement

Brand Name: CoolSiC

Series: IMW120RXM1H

Package: Tube

Configuration: Single

Fall time: 13 ns

Forward Transconductance - Min: 3 S

Product Type: MOSFETs

Rise time: 2.4 ns

Subcategory: MOSFETs

Transistor Type: 1 N-Channel

Typical turn-off delay time: 10.4 ns

Typical turn-on delay time: 5 ns

Part number alias: IMW120R140M1H SP001946184

Unit weight: 6 g