Shenzhen Meiyuxin Technology Co., Ltd. supplies IMW120R007M1HXKSA1 1200V 7mΩ CoolSiC™ trench silicon carbide MOSFET from stock! ! !

Product Description:

The 1200V 7mΩ CoolSiCTM Silicon Carbide MOSFET in a TO247-3 package is based on an advanced trench process optimized for performance and reliability. Compared with traditional silicon (Si)-based devices such as IGBTs and MOSFETs, SiC MOSFETs have many advantages, such as the lowest gate charge and device capacitance among 1200 V switching devices, no reverse recovery loss of the body diode, and the turn-off loss is affected by temperature. Turn-on characteristics with little influence and no knee voltage. Therefore, CoolSiC™ silicon carbide MOSFETs are well suited for hard switching and resonant switching topologies such as power factor correction (PFC) circuits, bidirectional topologies and DC-DC converters or DC-AC inverters.

feature description

Unparalleled switching and conduction losses

High threshold voltage, Vth > 4 V

0V Shutdown Gate Voltage for Simple Gate Drive

Wide gate-source voltage range

Rugged Low Loss Body Diode Suitable for Hard Switching

Turn-off loss is less affected by temperature

.XT diffusion bonding technology for best-in-class thermal performance

Advantage

highest efficiency

Less cooling work

higher frequency operation

increase power density

Reduce system complexity

Application field

Uninterruptible power supply (UPS)

battery formation

Electric Vehicle Fast Charging

Motor Control and Drive

Solar System Solutions