The 1200V 7mΩ CoolSiCTM Silicon Carbide MOSFET in a TO247-3 package is based on an advanced trench process optimized for performance and reliability. Compared with traditional silicon (Si)-based devices such as IGBTs and MOSFETs, SiC MOSFETs have many advantages, such as the lowest gate charge and device capacitance among 1200 V switching devices, no reverse recovery loss of the body diode, and the turn-off loss is affected by temperature. Turn-on characteristics with little influence and no knee voltage. Therefore, CoolSiC™ silicon carbide MOSFETs are well suited for hard switching and resonant switching topologies such as power factor correction (PFC) circuits, bidirectional topologies and DC-DC converters or DC-AC inverters.

Product parameters:

Product Type: MOSFETs

RoHS: Details

Technology: SiC

Installation Style: Through Hole

Transistor Polarity: N-Channel

Number of channels: 1 Channel

Vds-drain source breakdown voltage: 1.2 kV

Id-continuous drain current: 225 A

Rds On-drain-source on-resistance: 9.9 mOhms

Vgs - gate-source voltage: - 5 V, + 20 V

Vgs th-gate-source threshold voltage: 5.2 V

Qg-gate charge: 220 nC

Minimum operating temperature: - 55 C

Maximum operating temperature: + 175 C

Pd-power dissipation: 750 W

Channel Mode: Enhancement

Package: Tube

Product: MOSFETs

Product Type: MOSFETs

Subcategory: MOSFETs

Part number alias: IMW120R007M1H SP005425447