Shenzhen Meiyuxin Technology Co., Ltd. [SiC diode agent] STPSC20H12G-TR DIODE SIL CARB 1.2KV 20A D2PAK diode silicon carbide Schottky 1200 V 20A surface mount type D²PAK! ! !

Product Description:

The STPSC20H12G-TR SiC diode in TO-220AC, D²PAK, and TO-247 LL packages is an ultra-high performance power Schottky rectifier. It is a substrate manufactured using silicon carbide. The wide bandgap material allows the design of low VF Schottky diode structures rated at 1200 V. Due to the Schottky structure, recovery mode is not shown when off and ringing is negligible. The minimum capacitance turn-off behavior is independent of temperature. Especially suitable for PFC and secondary side applications, this ST SiC diode will improve performance under hard switching conditions. This rectifier will enhance the performance of the target application. Its high forward surge capability ensures good robustness during transient phases.

Feature:

• No or negligible reverse recovery

• Temperature independent switching behavior

• Rugged high voltage peripherals

• Operating temperature range from -40 °C to 175 °C

• Low VF

• ECOPACK® compatible components

Product Specifications:

Product Category: Schottky Diodes & Rectifiers

RoHS: Details

Product: Schottky Silicon Carbide Diodes

Installation style: SMD/SMT

Package/Case: D2PAK-2 (TO-263-2)

Configuration: Single

Technology: SiC

If - forward current: 20 A

Vrrm - Repetitive Reverse Voltage: 1.2 kV

Vf - forward voltage: 1.35 V

Ifsm - forward surge current: 38 A

Ir - reverse current : 10 uA

Minimum working temperature: - 40 C

Maximum operating temperature: + 175 C

Series: STPSC20H12

Package: Reel

Product Type: Schottky Diodes & Rectifiers

Subcategory: Diodes & Rectifiers

Vr - Reverse Voltage : 800 V

Unit weight: 2.240 g