Shenzhen Meiyuxin Technology Co., Ltd. 【IGBT Module Distribution】New original A2U12M12W2-F2 discrete semiconductor module ACEPACK 2 power module, 3-level topology, 1200 V, 13 mOhm typ. SiC Power MOSFET! ! !

Product Description:

This ACEPACK 2 power module represents a branch of a T-type 3-level inverter integrating advanced SiC power MOSFET technology topology from STMicroelectronics. The module utilizes a wide bandgap silicon carbide material and a high thermal performance substrate. The result is extremely low on-resistance per unit area and excellent switching performance that is virtually independent of temperature. NTC sensors complete the design.

Product Specifications:

Product Category: Discrete Semiconductor Modules

RoHS: Details

Product: IGBT Silicon Carbide Modules

Type: Full Bridge

Technology: SiC

Vr - Reverse Voltage : 1200 V

Vgs - gate-source voltage: -10 V to 22 V

Installation Style: Press Fit

Minimum working temperature: - 40 C

Maximum working temperature: + 150 C

Product Type: Discrete Semiconductor Modules

Subcategory: Discrete Semiconductor Modules

Unit weight: 42 g

Feature：

• 3-level topology

• ACEPACK 2 power supply module

– Typical RDS(on) of 13 mΩ per switch

– Insulation voltage UL listed at 2.5 kVrms

– Integrated NTC temperature sensor

– DBC Cu-Al2O3-Cu based

– Press-fit contact pins

Application：

• DC/DC Converter