Shenzhen Meiyuxin Technology Co., Ltd. [TI Automotive Chip Agent] Sells the New UCC27524AQDGNRQ1 Automotive 5A/5A Dual-Channel Gate Driver! ! !

Product Description:

UCC27524AQDGNRQ1 device is a dual-channel, high-speed, low-side, gate driver device capable of efficiently driving metal-oxide-semiconductor field-effect transistor (MOSFET) and insulated gate bipolar transistor (IGBT) power switches. A variation of the UCC27524AQDGNRQ1 family. For added robustness, the UCC27524A-Q1 adds the ability to handle -5V directly on the input pins. The UCC27524AQDGNRQ1 is a dual non-inverting driver. Using a design that greatly reduces breakdown current internally, the UCC27524A-Q1 device is capable of delivering high peak current pulses up to 5A source and 5A sink to capacitive loads, the device also features rail-to-rail drive capability and 13ns typical extremely small propagation delay. In addition, the driver features an internal propagation delay that is matched between the two channels, making this driver ideal for applications such as synchronous rectifiers that have stringent timing requirements for dual gate drive. This also allows two channels to be connected in parallel, effectively increasing the current drive capability or driving two switches in parallel with a single input signal. Input pin thresholds are based on TTL and CMOS compatible low voltage logic that is fixed and independent of the VDD supply voltage. Wide hysteresis between high and low thresholds provides excellent noise immunity.

UCC27524AQDGNRQ1 For safety reasons, internal pull-up and pull-down resistors on the input pins of the UCC27524AQDGNRQ1 device ensure that the outputs are held low when the input pins are left floating. The UCC27524AQDGNRQ1 device features enable pins (ENA and ENB) to better control the operation of this driver application. For active-high logic, these pins are internally pulled up to VDD and can be left open for standard operation.

The UCC27524AQDGNRQ1 device is available in SOIC-8 (D) and (MSOP)-8 (DGN) packages with exposed pad.

Product Features:

Compliant with automotive application requirements

The following results are AEC-Q100 qualified

Device Temperature Grade 1

Device Human Body Model (HBM) Electrostatic Discharge (ESD) Classification Level H2

Device Charger Device Model (CDM) ESD Classification Level C4B

Industry Standard Pinout

Two independent gate drive channels

5A Peak Drive Source and Sink Current

Independent enable function for each output

TTL and CMOS Compatible Logic Thresholds Independent of Supply Voltage

Hysteretic logic threshold for high noise immunity

Capable of handling negative voltages (-5V) on the input

Input and enable pin voltage levels are not limited by the VDD pin bias supply voltage

4.5V to 18V Single Supply Range

Output is held low during VDD undervoltage lockout (UVLO) (to ensure glitch-free operation on power-up and power-down)

Fast propagation delay (13ns typical)

Fast rise and fall times (7ns and 6ns typical)

Typical 1ns delay matching time between two channels

For higher drive currents, both outputs can be paralleled

Output stays low when input is floating

Small Outline Integrated Circuit (SOIC)-8, Surface Mount Small Outline (MSOP)-8 Package PowerPAD Package Options

-40°C to 140°C operating temperature range

Scope of application

Automotive

Switch Mode Power Supply

DC to DC Converter

Motor Control, Solar

Gate drive for newly marketed wide bandgap power devices such as GaN