Shenzhen Meiyuxin Technology Co., Ltd. supplies a large number of stock [automotive chips] ISO5452QDWRQ1 isolated gate driver! ! !

Product Description:

ISO5452QDWRQ1 is a 5.7 kVRMS reinforced isolated gate driver for IGBTs and MOSFETs with split outputs (OUTH and OUTL) and 2.5A source and 5A sink capability. The input operates from a single 2.25V to 5.5V supply. The allowable power supply range at the output is 15V to

30V. Two complementary CMOS inputs control the output state of the gate driver. The short propagation time of 76ns ensures precise control of the output stage.

A built-in desaturation (DESAT) fault detection function identifies when the IGBT is in an overcurrent condition. When DESAT is detected, the "mute" logic immediately blocks the isolator output and initiates a soft-shutdown process to disable OUTH and pull OUTL low continuously

2μs. When OUTL reaches 2V (relative to the maximum negative supply potential VEE2), the gate driver output is "hard" pulled to the VEE2 potential, turning the IGBT off immediately.

When a desaturation fault occurs, the device sends a fault signal through the isolation barrier to pull the FLT output at the input low and block the input to the isolator. The "mute" logic is active during soft shutdown. The output state of the FLT will be latched and can only be reset by an active low pulse on the RST input after RDY goes high.

If the IGBT is turned off during normal operation powered by a bipolar output supply, the output voltage is hard-clamped to VEE2. If the output supply is unipolar, an active Miller clamp can be used, which sinks the Miller current on a low impedance path, preventing the IGBT from dynamically turning on during high voltage transient conditions.

The readiness of the gate driver for operation is controlled by two undervoltage lockout circuits that monitor the power supply at the input and output. The RDY output will go low if either end of the power supply is insufficient, otherwise the output will be high.

ISO5452QDWRQ1 is available in a 16-pin Small Outline Integrated Circuit (SOIC) package. The device is specified for an ambient temperature range of -40°C to 125°C.

Applications:

Isolated Insulated Gate Bipolar Transistor (IGBT) and Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Drivers:

Hybrid Electric Vehicle (HEV) and Electric Vehicle (EV) Power Modules

Industrial Motor Control Drives

Industrial power

Solar inverters

Induction heating