The AUIRF8739L2TR combines the latest automotive HEXFET® power MOSFET silicon technology with advanced DirectFET® packaging technology to achieve superior performance in a SO-8 or 5X6mm PQFN package with only a 0.7mm profile. This DirectFET® packaging and power applications, PCB assembly equipment and vapor phase, infrared or convection soldering techniques when following Application Note AN-1035 on Manufacturing Methods and Processes. DirectFET® packaging allows double-sided cooling to maximize heat transfer in automotive power systems.

The AUIRF8739L2TR is a HEXFET® power MOSFET designed for applications where efficiency and power density are important. The advanced DirectFET® packaging platform combined with the latest silicon technology enables the AUIRF8739L2 to provide substantial system-level savings and performance improvements especially for motor drives, DC-DC and other heavy-duty applications on ICE, HEV and EV platforms. This MOSFET uses the latest process technology to achieve ultra-low on-resistance per silicon area. Other features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET an efficient, robust and reliable high current device for automotive applications.

Product Specifications:

Product Category: MOSFET

RoHS: Details

Technology: Si

Installation style: SMD/SMT

Package/Case: DirectFET-L8

Transistor Polarity: N-Channel

Number of channels: 1 Channel

Vds-drain-source breakdown voltage: 40 V

Id-Continuous Drain Current: 545 A

Rds On-Drain Source On Resistance: 600 uOhms

Vgs - Gate-Source Voltage: - 40 V, + 40 V

Vgs th-gate-source threshold voltage: 2.2 V

Qg-gate charge: 562 nC

Minimum operating temperature: - 55 C

Maximum operating temperature: + 175 C

Pd-Power Dissipation: 340 W

Channel Mode: Enhancement

Qualification: AEC-Q101

Configuration: Single

Fall Time: 95 ns

Forward Transconductance - Min: 250 S

Height: 0.74 mm

Length: 9.15 mm

Product Type: MOSFET

Rise Time: 117 ns

Subcategory: MOSFETs

Transistor Type: 1 N-Channel

Typical turn-off delay time: 120 ns

Typical turn-on delay time: 34 ns

Width: 7.1 mm

Part number alias: AUIRF8739L2TR SP001516480

Unit weight: 176.520 mg