The UCC27200QDDARQ1 series of high-frequency N-channel MOSFET drivers includes a 120-V bootstrap diode and high-side and low-side drivers with separate inputs for maximum control flexibility. This allows N-channel MOSFET control in half-bridge, full-bridge, two-switch forward and active clamp forward converters. The low-side and high-side gate drivers are independently controlled and matched to 1 ns between each other's turn-on and turn-off.

The UCC27200QDDARQ1 on-chip bootstrap diode eliminates external discrete diodes. Undervoltage lockout is provided for both high-side and low-side drivers, forcing the output low if the drive voltage falls below a specified threshold.

Two versions are available, the UCC27200QDDARQ1 with high noise immunity CMOS input thresholds and the UCC27201-Q1 with TTL compatible thresholds.

UCC27200QDDARQ1 Both devices are available in an 8-pin SO PowerPAD (DDA) package.

Product Specifications:

Product Type: Door Drivers

RoHS: Details

Type: High-Side, Low-Side

Installation style: SMD/SMT

Package / Enclosure: SO-PowerPad-8

Number of Drivers: 2 Driver

Number of outputs: 2 Output

Output current: 3A

Supply voltage - min: 8 V

Supply Voltage - Max: 20 V

Rise time: 8 ns

Fall time: 7 ns

Minimum working temperature: - 40 C

Maximum working temperature: + 125 C

Series: UCC27200-Q1

Qualification: AEC-Q100

Humidity Sensitivity: Yes

Working power supply current: 4 mA

Operating supply voltage: 8 V to 20 V

Pd-power dissipation: 2700 mW

Product Type: Gate Drivers

Subcategory: PMIC - Power Management ICs

Technology: Si

Unit weight: 70.600 mg