The LMG3410R070RWHR GaN power stage features integrated drivers and protection, allowing designers to achieve higher levels of power density and efficiency in power electronics systems. The inherent advantages of the LMG341x over silicon MOSFETs include ultra-low input and output capacitance values, zero reverse recovery that reduces switching losses by 80%, and low switch node ringing that reduces EMI. These advantages enable dense and efficient topologies such as totem-pole PFC.

The LMG3410R070RWHR provides an alternative to traditional cascode GaN and standalone GaN FETs by integrating a unique set of features to simplify designs, maximize reliability and optimize the performance of any power supply. Integrated gate driver supports 100V/ns switching (nearly zero Vds ringing), sub-100ns current limit protects itself against accidental shoot-through events, thermal shutdown prevents thermal runaway, and system interface signals provide self-monitoring .

Product Specifications:

Manufacturer: LMG3410R070RWHR

Product Category: Door Drivers

RoHS: Details

Product: MOSFET Gate Drivers

Installation style: SMD/SMT

Package/Case: VQFN-32

Number of Exciters: 1 Driver

Number of outputs: 1 Output

Output current: 40 A

Supply Voltage - Min: 9.5 V

Supply Voltage - Maximum: 18 V

Configuration: Non-Inverting

Rise time: 15 ns

Fall Time: 4.2 ns

Minimum operating temperature: - 40 C

Maximum operating temperature: + 125 C

Series: LMG3410R070

Logic Type: CMOS

Max off delay time: 10 ns

Maximum turn-on delay time: 12 ns

Moisture Sensitivity: Yes

Operating supply current: 43 mA

Product Type: Gate Drivers

Propagation Delay—Max: 20 ns, 36 ns

Rds On-Drain Source On Resistance: 70 mOhms

Subcategory: PMIC - Power Management ICs

Technology: Si

Brand Name: GaN