IMZA65R072M1H Technologies CoolSiC™ 650V MOSFETs combine the physical strength of silicon carbide with amplifying device performance, reliability, and ease of use. With its state-of-the-art trench semiconductor process, CoolSiC™ MOSFETs offer the lowest losses in application and the highest reliability in operation. CoolSiC is ideal for use in high temperature and harsh environment applications.

Product parameters:

Product Type: MOSFETs

RoHS: Details

Technology: SiC

Installation Style: Through Hole

Package / Box: TO-247-4

Transistor Polarity: N-Channel

Number of channels: 1 Channel

Vds-Drain Source Breakdown Voltage: 650 V

Id-continuous drain current: 28 A

Rds On-drain-source on-resistance: 94 mOhms

Vgs - gate-source voltage: - 5 V, + 23 V

Vgs th-gate-source threshold voltage: 5.7 V

Qg-gate charge: 22 nC

Minimum operating temperature: - 55 C

Maximum working temperature: + 150 C

Pd-power dissipation: 96 W

Channel Mode: Enhancement

Brand Name: CoolSiC

Series: IMZA65R072

Configuration: Single

Fall time: 5.6 ns

Product Type: MOSFETs

Rise time: 8.6 ns

Subcategory: MOSFETs

Transistor Type: 1 N-Channel

Typical turn-off delay time: 21.6 ns

Typical turn-on delay time: 15.2 ns

Part number alias: IMZA65R072M1H SP005398434

Unit weight: 6 g