Shenzhen Meiyuxin Technology Co., Ltd. [distributing SIC silicon carbide] SCTWA60N120G2-4 silicon carbide MOSFET quality assurance brand new original! ! !

Product Description:

SCTWA60N120G2-4 SiC power MOSFETs bring the advancement and reliability of wide bandgap materials to a wider range of energy-saving applications, such as those used in electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies and smart grid equipment inverter. The extended voltage range from 650V to 1700V enables excellent switching performance, as well as extremely low RDS(on) performance per unit area, enabling more efficient and compact systems. ST's 1200V SiC MOSFETs have a high temperature rating of 200°C, which improves the thermal design of power electronics systems. SiC MOSFETs have lower switching losses and less variation with temperature than silicon MOSFETs.

Features:

Automotive Grade (AG) Equipment

Ultra-high temperature processing capability (maximum TJ=200°C)

Very low switching losses (minimal variation over temperature), allowing operation at very high switching frequencies

Low on-resistance over temperature

easy to drive

Very fast and powerful body diode

Application

Solar Inverter, UPS

motor driven

High Voltage DC-DC Converter

switching power supply