Shenzhen Meiyuxin Technology Co., Ltd.【distributing original IGBT】IKY50N120CH7XKSA1 1200 V IGBT Transistor 1200 V, 50 A IGBT with Anti-Parallel Diode in TO-247PLUS 4-Pin Package Quality Assurance New Original! ! !

Product Description:

The IKY50N120CH7XKSA1 is a hard-switching 1200 V, 50 A TRENCHSTOP™ IGBT7 H7 discrete device in TO-247PLUS 4-pin package technology to meet the needs of decarbonization-focused applications such as solar photovoltaics, uninterruptible power supplies, and battery chargers.

Summary of IKY50N120CH7XKSA1 Features

Outstanding VCEsat performance thanks to the well-known Infineon TRENCHSTOP™ technology

Fast switching behavior with low EMI emissions

Diode optimized for target application, very soft and low Qrr

Choice of low gate resistance (down to 5 Ω) while maintaining excellent switching performance

Provides a Tj (max) of 175 °C

IKY50N120CH7XKSA1 Benefits

Highest power density technology rated up to 140A

Optimized performance under application conditions

lowest conduction loss

lowest switching loss

Humidity Robustness in Harsh Environments

Improved EMI performance

Highest Power Density with TO-247PLUS vs. TO-247 Thermal Capability

Kelvin emitter pins further reduce total switching losses compared to 3 pins

IKY50N120CH7XKSA1 Application

EV charging

Photovoltaic energy system solutions

Uninterruptible Power Supply (UPS)