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NVBG080N120SC1 Silicon Carbide (SiC) MOSFET

Time:2023-04-21   Views:

Shenzhen Meiyuxin Technology Co., Ltd. [distributing ON transistors] NVBG080N120SC1 silicon carbide (SiC) MOSFET quality assurance brand new original! ! !


Product Description:

The NVBG080N120SC1 EliteSiC MOSFET uses a new technology that provides superior switching performance and higher reliability compared to silicon. In addition, low on-resistance and compact die size ensure low capacitance and gate charge. Thus, system benefits include highest efficiency, faster operating frequency, higher power density, lower EMI, and smaller system size.


Features:

AEC−Q101 Automotive Qualified

Rated voltage 1200V

High-Speed Switching and Low Capacitance

100% UIL tested

Device is RoHS Compliant


Applications:

High power DCDC

Inverter


Terminal application:

Automotive DC/DC converter for EV/PHEV

Automotive Inverter

NVBG080N120SC1.png

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