Shenzhen Meiyuxin Technology Co., Ltd. [distributing SIC chips] FFSD1065B-F085 silicon carbide Schottky diode quality assurance brand new original! ! !

FFSD1065B-F085 product description:

Silicon carbide (SiC) Schottky diodes use a new technology that offers superior switching performance and higher reliability compared to silicon. No reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance make SiC a next-generation power semiconductor. System benefits include highest efficiency, faster operating frequency, higher power density, lower EMI, and reduced system size and cost.

FFSD1065B-F085 Features:

• 175°C maximum junction temperature

• Avalanche rated 144 mJ

• High surge current capability

• Positive temperature coefficient

• Easy to parallel

• No reverse recovery/no forward recovery

• AEC-Q101 qualified and PPAP capable

• These devices are Pb-free, Halogen-free/BFR-free and RoHS compliant

FFSD1065B-F085 application:

• Automotive HEV−EV on-board charger

• Automotive HEV−EV DC−DC converters