Shenzhen Meiyuxin Technology Co., Ltd. [IGBT module agent] NXH100B120H3Q0PTG PIM 60-80KW Q0BOOST-L57 1200V 100A! ! !

Product Description:

The NXH100B120H3Q0PTG is a power module stage that includes a dual boost. Integrated field-stop trench IGBTs and SiC diodes provide lower conduction and switching losses, enabling designers to achieve high efficiency and superior reliability.

Product Specifications:

Manufacturer: NXH100B120H3Q0PTG

Product Category: IGBT Modules

RoHS: Details

Product: IGBT Silicon Carbide Modules

Configuration: Dual

Collector-emitter maximum voltage VCEO: 1200 V

Collector-Emitter Saturation Voltage: 1.77 V

Continuous collector current at 25 C: 50 A

Gate-Emitter Leakage Current: 800 nA

Pd-Power Dissipation: 186 W

Package / Box: Q0BOOST

Minimum operating temperature: - 40 C

Maximum operating temperature: + 150 C

Package: Tray

Trademark: NXH100B120H3Q0PTG

Gate/Emitter Max Voltage: 20 V

Installation style: Press Fit

Product Type: IGBT Modules

Subcategory: IGBTs

Technology: SiC

Application：

Solar Inverter

Uninterruptible Power Supplies

Energy Storage Systems